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| PD 91735A IRG4RC10K INSULATED GATE BIPOLAR TRANSISTOR Features * Short Circuit Rated UltraFast: Optimized for high operating frequencies >5.0 kHz , and Short Circuit Rated to 10s @ 125C, VGE = 15V * Generation 4 IGBT design provides higher efficiency than Generation 3 * Industry standard TO-252AA package C Short Circuit Rated UltraFast IGBT VCES = 600V G E VCE(on) typ. = 2.39V @VGE = 15V, IC = 5.0A n-channel Benefits * Generation 4 IGBT's offer highest efficiency available * IGBT's optimized for specified application conditions D-PAK TO-252AA Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector CurrentQ Clamped Inductive Load CurrentR Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy S Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 9.0 5.0 18 18 10 20 34 38 15 -55 to + 150 300 (0.063 in. (1.6mm) from case ) Units V A s V mJ W C Thermal Resistance Parameter RJC RJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)* Weight Typ. --- --- 0.3 (0.01) Max. 3.3 50 --- Units C/W g (oz) * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994 www.irf.com 1 12/30/00 IRG4RC10K Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Collector-to-Emitter Breakdown Voltage 600 -- Emitter-to-Collector Breakdown Voltage T 18 -- Temperature Coeff. of Breakdown Voltage -- 0.58 -- 2.39 Collector-to-Emitter Saturation Voltage -- 3.25 -- 2.63 Gate Threshold Voltage 3.0 -- Temperature Coeff. of Threshold Voltage -- -11 Forward Transconductance U 1.2 1.8 -- -- Zero Gate Voltage Collector Current -- -- -- -- Gate-to-Emitter Leakage Current -- -- Max. Units Conditions -- V VGE = 0V, IC = 250A -- V VGE = 0V, IC = 1.0A -- V/C VGE = 0V, IC = 1.0mA VGE = 15V 2.62 IC = 5.0A -- IC = 9.0A See Fig.2, 5 V -- IC = 5.0A , TJ = 150C 6.5 VCE = VGE, IC = 250A -- mV/C VCE = VGE, IC = 250A -- S VCE = 50 V, IC = 5.0A 250 VGE = 0V, VCE = 600V A 2.0 VGE = 0V, VCE = 10V, TJ = 25C 1000 VGE = 0V, VCE = 600V, TJ = 150C 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units Conditions 19 29 IC = 5.0A 2.9 4.3 nC VCC = 400V See Fig.8 9.8 15 VGE = 15V 11 -- 24 -- TJ = 25C ns 51 77 IC = 5.0A, VCC = 480V 190 290 VGE = 15V, R G = 100 0.16 -- Energy losses include "tail" 0.10 -- mJ See Fig. 9,10,14 0.26 0.32 -- -- s VCC = 400V, TJ = 125C VGE = 15V, R G = 100 , VCPK < 500V 11 -- TJ = 150C, 27 -- IC = 5.0A, VCC = 480V ns 67 -- VGE = 15V, R G = 100 350 -- Energy losses include "tail" 0.47 -- mJ See Fig. 10,11,14 7.5 -- nH Measured 5mm from package 220 -- VGE = 0V 29 -- pF VCC = 30V See Fig. 7 7.5 -- = 1.0MHz Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) S Repetitive rating; pulse width limited by maximum junction temperature. R VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 100, (See fig. 13a) T Pulse width 80s; duty factor 0.1%. U Pulse width 5.0s, single shot. 2 www.irf.com IRG4RC10K 4 For both: Triangular wave: 3 Loa d C urre nt (A ) Duty cycle: 50% TJ = 125C Tsink = 55C Gate drive as specified Power Dissipation = 1.4W Clamp voltage: 80% of rated Square wave: 2 60% of rated voltage 1 Ideal diodes 0 0.1 1 10 A 100 f, F re q u e n c y (k H z) Fig. 1 - Typical Load Current vs. Frequency (Load Current = IRMS of fundamental) 100 100 TJ = 25 C 10 I C , Collector-to-Emitter Current (A) I C , Collector Current (A) T = 150 C J 10 TJ = 150 C TJ = 25 C 1 5 10 1 1.0 V = 15V 20s PULSE WIDTH GE 2.0 3.0 4.0 5.0 6.0 7.0 V = 50V 5s PULSE WIDTH CC 15 20 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics 5s PULSE WIDTH www.irf.com 3 IRG4RC10K 10 5.0 8 VCE , Collector-to-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE I C = 10 A Maximum DC Collector Current(A) 4.0 6 3.0 IC = 5 A I C = 2.5 A 4 2.0 2 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , Case Temperature ( C) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Typical Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC ) D = 0.50 1 0.20 0.10 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.01 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.1 0.0001 0.001 0.01 P DM t1 t2 1 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4RC10K 400 VGE , Gate-to-Emitter Voltage (V) 300 VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 5.0A 16 C, Capacitance (pF) Cies 200 12 8 100 C oes C res 4 0 1 10 100 0 0 4 8 12 16 20 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.28 Total Switching Losses (mJ) 0.26 Total Switching Losses (mJ) VCC = 480V VGE = 15V TJ = 25 C I C = 5A 10 100 RG = Ohm VGE = 15V VCC = 480V 0.24 1 IC = 10 A IC = 5 A IC = 2.5 A 0.22 0.20 0 20 40 60 80 100 0.1 -60 -40 -20 0 20 40 60 80 100 120 140 160 RG , Gate Resistance ( ) TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4RC10K 1.2 Total Switching Losses (mJ) RG TJ VCC 1.0 VGE 0.8 I C , Collector Current (A) = 100 Ohm = 150 C = 480V = 15V 100 VGE = 20V T J = 125 oC 10 0.6 0.4 0.2 2 4 6 8 SAFE OPERATING AREA 1 10 1 10 100 1000 I C , Collector Current (A) VCE , Collector-to-Emitter Voltage (V) Fig. 11 - Typical Switching Losses vs. Collector Current Fig. 12 - Turn-Off SOA L 50V 10 0 0V VC * D .U .T. RL = 0 - 480V 480V 4 X I C@25C 480F 960V R Q * Driver s am e ty pe a s D .U .T .; V c = 80 % of Vc e(m ax ) * Note: Due to the 5 0V pow e r supply, puls e w idth and inductor w ill incre as e to obta in rated Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V Q R S * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 6 www.irf.com IRG4RC10K Q R 90 % S 10 % 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 1 0% IC 5% t d (o n ) tr Eon E ts = (E o n +E o ff ) tf t=5 s E o ff Package Outline TO-252AA Outline Dimensions are shown in millimeters (inches) 6.73 (.2 65) 6.35 (.2 50) -A5.46 (.2 15 ) 5.21 (.2 05 ) 4 6.45 (.2 45 ) 5.68 (.2 24 ) 6.2 2 (.245 ) 5.9 7 (.235 ) 1.02 (.0 40) 1.64 (.0 25) 1 2 3 -B1.5 2 (.0 60 ) 1.1 5 (.0 45 ) 3X 1 .1 4 (.04 5) 2 X 0 .7 6 (.03 0) 2 .28 (.09 0) 4.5 7 (.1 80 ) 0.8 9 (.035 ) 0.6 4 (.025 ) 0 .25 (.01 0) M AMB 0.51 (.0 20 ) M IN. 1 0.42 (.4 10 ) 9 .4 0 (.37 0) LEAD ASSIGNMENTS 2 .3 8 (.09 4) 2 .1 9 (.08 6) 1.14 (.0 45) 0.89 (.0 35) 0.5 8 (.02 3) 0.4 6 (.01 8) 1.2 7 (.050 ) 0.8 8 (.035 ) LE AD A SSGATE E NTS 1 - IG N M 1 - G ATE 2 - COLLECTOR 2 - D RA IN 3 - EMITTER 3 - SO U R C E 4 4 D RA IN - - COLLECTOR 0 .58 (.0 23) 0 .46 (.0 18) N O TE S: 1 D IM EN S IO N IN G & TO LE R AN C IN G PE R A N SI Y 14 .5M , 1 982 . 2 C O N TR O LLING D IM EN S IO N : INC H . 3 C O N FO R M S TO JED E C O U TLIN E TO -25 2A A. 4 D IM EN S IO N S S H O W N AR E B EF O RE SO L D ER D IP, SO L D ER D IP M AX. +0 .16 (.00 6). www.irf.com 7 IRG4RC10K Tape & Reel Information TO-252AA TR TRR TRL 1 6.3 ( .641 ) 1 5.7 ( .619 ) 16 .3 ( .641 ) 15 .7 ( .619 ) 12 .1 ( .4 76 ) 11 .9 ( .4 69 ) F E E D D IR E C T IO N 8.1 ( .318 ) 7.9 ( .312 ) F E E D D IR E C T IO N NO T ES : 1. C O N T R O LL IN G D IM E N S IO N : M ILLIM E T E R . 2. A LL D IM E N S IO N S A R E S H O W N IN M ILL IM E T E R S ( IN C H E S ). 3. O U T L IN E C O N F O R M S T O E IA -4 81 & E IA -54 1. 13 IN C H 16 m m NOTES : 1. O U T LIN E C O N F O R M S T O E IA -481 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 12/00 8 www.irf.com |
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